Interband absorption of long-wavelength radiation in δ-doped superlattices based on single-crystal wide-gap semiconductors
Identifieur interne : 016332 ( Main/Repository ); précédent : 016331; suivant : 016333Interband absorption of long-wavelength radiation in δ-doped superlattices based on single-crystal wide-gap semiconductors
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Abstract
A new type of superlattice formed in a single-crystal nondegenerate, wide-gap semiconductor by a sequence of pairs of closely spaced, δ-doped donor and acceptor layers is proposed. It is shown that because of the superstrong electric fields generated between these δ-doped layers, the electroabsorption of long-wavelength radiation is determined by tunneling optical transitions of electrons from the heavy-hole band (in contrast to the case of moderately strong fields when the electroabsorption is determined by light holes). The magnitude of the electroabsorption is close to the interband absorption for light and is virtually independent of the photon energy up to the far-infrared region. It was found that in the proposed InSb-based superlattice the absorption in superstrong fields can exceed 103 cm-1 up to radiation wavelengths approximately equal to 50-100 μm. It is noted that because of the spatial separation of the photogenerated electrons and holes, their lifetime and the long-wavelength sensitivity of such a superlattice have giant values. © 1998 American Institute of Physics.
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Foygel</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>South Dakota School of Mines and Technology, Rapid City, South Dakota 57701-3995</s1><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Dakota du Sud</region></placeName><wicri:cityArea>South Dakota School of Mines and Technology, Rapid City</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">98-0188649</idno><date when="1998-02">1998-02</date><idno type="stanalyst">PASCAL 98-0188649 AIP</idno><idno type="RBID">Pascal:98-0188649</idno><idno type="wicri:Area/Main/Corpus">017441</idno><idno type="wicri:Area/Main/Repository">016332</idno></publicationStmt><seriesStmt><idno type="ISSN">1063-7826</idno><title level="j" type="abbreviated">Semiconductors</title><title level="j" type="main">Semiconductors</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficients</term><term>Electroabsorption</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Infrared spectra</term><term>Semiconductor superlattices</term><term>Theoretical study</term><term>Tunnel effect</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7820J</term><term>7820C</term><term>7866F</term><term>7830F</term><term>7340G</term><term>Etude théorique</term><term>Semiconducteur bande interdite large</term><term>Superréseau semiconducteur</term><term>Spectre IR</term><term>Electroabsorption</term><term>Coefficient absorption</term><term>Effet tunnel</term><term>Indium composé</term><term>Semiconducteur III-V</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A new type of superlattice formed in a single-crystal nondegenerate, wide-gap semiconductor by a sequence of pairs of closely spaced, δ-doped donor and acceptor layers is proposed. It is shown that because of the superstrong electric fields generated between these δ-doped layers, the electroabsorption of long-wavelength radiation is determined by tunneling optical transitions of electrons from the heavy-hole band (in contrast to the case of moderately strong fields when the electroabsorption is determined by light holes). The magnitude of the electroabsorption is close to the interband absorption for light and is virtually independent of the photon energy up to the far-infrared region. It was found that in the proposed InSb-based superlattice the absorption in superstrong fields can exceed 10<sup>3</sup> cm<sup>-1</sup> up to radiation wavelengths approximately equal to 50-100 μm. 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